Theoretical investigation of planar junction termination

Solid-State Electronics

Volumn 39, Issue 3, 1996, Pages 323-328

  Drabe, T ^a   Sittig, R ^a  

^a TECHNICAL UNIVERSITY OF BRAUNSCHWEIG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION; ELECTRIC BREAKDOWN; ELECTRIC FIELD EFFECTS; ELECTRIC SPACE CHARGE; ELECTROSTATICS; IONIZATION; OPTIMIZATION; PERMITTIVITY; POLYNOMIALS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING;

DOPING CONCENTRATION; IONIZATION INTEGRALS; PLANAR JUNCTION TERMINATION; POTENTIAL DISTRIBUTION; SEMICONDUCTOR BULK;

SEMICONDUCTOR JUNCTIONS;

EID: 0030103416     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(95)00195-6     Document Type: Article

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