Silicon-to-indium tin oxide coated glass bonding for packaging of field emission arrays fabricated on silicon wafer

Journal of Materials Science

Volumn 34, Issue 19, 1999, Pages 4711-4717

  Choi, W B ^a   Ju, B K ^a   Lee, Y H ^a   Oh, M H ^a   Lee, N Y ^b   Sung, M Y ^c  

^a Korea Institute of Science and Technology   (South Korea)

^b Orion Electric Co   (South Korea)

^c Korea University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BONDING; CATHODE RAY TUBES; COMPOSITION; DOPING (ADDITIVES); ELECTRON BEAMS; EVAPORATION; FLAT PANEL DISPLAYS; GLASS; INDIUM COMPOUNDS; SECONDARY ION MASS SPECTROMETRY; TEMPERATURE; TIN;

ANODIC BONDING TECHNIQUE; ELECTRON BEAM EVAPORATION; FIELD EMISSION ARRAYS; FIELD EMISSION DISPLAY; INDIUM TIN OXIDE; SECONDARY ION MASS SPECTROSCOPY ANALYSIS;

SILICON WAFERS;

EID: 0033204017     PISSN: 00222461     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1004654116591     Document Type: Article

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