MOCVD of ferroelectric thin films

Journal De Physique. IV : JP

Volumn 9 pt 2, Issue 8, 1999, Pages

  Schmidt, C ^a   Lehnert, W ^a   Leistner, T ^b   Frey, L ^b   Ryssel, H ^a,b  

^a FRAUNHOFER INSTITUTE FOR INTEGRATED CIRCUITS IIS   (Germany)

^b UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION; COMPOSITION; ELECTRIC PROPERTIES; ELECTRODES; ELLIPSOMETRY; FERROELECTRIC MATERIALS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; REFRACTIVE INDEX; SEMICONDUCTING LEAD COMPOUNDS; SILICON WAFERS; TEMPERATURE; THICKNESS MEASUREMENT;

ELECTRICAL POLARIZATION; FERROELECTRIC THIN FILMS; LEAD TITANATE; LEAD ZIRCONATE TITANATE; LIQUID METAL ORGANIC PRECURSORS; PLATINUM ELECTRODES; SPECTROSCOPIC ELLIPSOMETRY;

THIN FILMS;

EID: 0033188109     PISSN: 11554339     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1051/jp4:1999872     Document Type: Article

References (6)

1. th International Conference and EUROCVD-11 , edited by M.D. Allendorf and C. Bernard, Pennington, NJ (1997), PV 97-25, pp. 1055-1062
2. Dr. M. Morstein, ETH Zürich, private communication (1998)
3. M. Dauelsberg, L. Kadinski, C. Schmidt, C. Allenbach, M. Morstein, MODELING OF FLOW AND HEAT TRANSFER IN A VERTICAL REACTOR FOR THE MOCVD OF ZIRCONIUM-BASED COATINGS, in Simulation of semiconductor processes and devices, edited by K. DeMeyer, S. Biesemans, Wien (1998), pp. 22-25
4. 2) ELECTRODES FOR NONVOLATILE MEMORY APPLICATIONS, J. Appl. Phys. 77 (1995), pp. 2146-2154
5. th International Conference and EUROCVD-11 , edited by M.D. Allendorf and C. Bernard, Pennington, NJ (1997), PV 97-25, pp. 1043-1054 and references herein
6. 2 AMBIENT; in Ferroelectric Thin Films VI, edited by R.E. Treece, R.E. Jones C.M. Foster, S.B. Desu and I.K. Yoo, Warrendale, PA (1997), 493, pp.137-142