Structure and properties of InGaAs layers grown by low-temperature molecular-beam epitaxy

Semiconductors

Volumn 33, Issue 8, 1999, Pages 824-829

  Vilisova, M D ^a   Ivonin, I V ^a   Lavrentieva, L G ^a   Subach, S V ^a   Yakubenya, M P ^a   Preobrazhenskii V V ^b   Putyato, M A ^b   Semyagin, B R ^b   Bert, N A ^c   Musikhin, Yu G ^c   Chaldyshev, V V ^c  

^a TOMSK STATE UNIVERSITY   (Russian Federation)

^b INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

^c IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0033177755     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1187790     Document Type: Article

References (13)

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