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Volumn 33, Issue 8, 1999, Pages 915-919

Current-voltage characteristics of Si:As blocked impurity band photodetectors with hopping conductivity (BIB-II)

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[No Author keywords available]

Indexed keywords


EID: 0033177420     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1187629     Document Type: Article
Times cited : (7)

References (16)
  • 3
    • 0009327567 scopus 로고
    • V. V. Bolotov, G. N. Kamaev, G. N. Feofanov, and V. M. Émekskuzyan, Fiz. Tekh. Poluprovodn. 24, 1697 (1990) [Sov. Phys. Semicond. 24, 1061 (1990)];
    • (1990) Sov. Phys. Semicond. , vol.24 , pp. 1061
  • 5
    • 0041108461 scopus 로고    scopus 로고
    • V. M. Emekskuzyan, G. N. Kamaev, G. N. Feofanov, and V. V. Bolotov, Fiz. Tekh. Poluprovodn. 31, 311 (1997) [Semiconductors 31, 255 (1997)].
    • (1997) Semiconductors , vol.31 , pp. 255
  • 7
    • 0033131541 scopus 로고    scopus 로고
    • D. G. Esaev, S. P. Sinitsa, and E. V. Chernyavskiǐ, Fiz. Tekh. Poluprovodn. 33, 614 (1999) [Semiconductors 33, 574 (1999)].
    • (1999) Semiconductors , vol.33 , pp. 574


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.