Current-voltage characteristics of Si:As-based photodetectors with blocked hopping conductivity

Semiconductors

Volumn 33, Issue 5, 1999, Pages 574-577

  Esaev, D G ^a   Sinitsa, S P ^a   Chernyavskii E V ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

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Indexed keywords

EID: 0033131541     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1187731     Document Type: Article

References (18)

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