Circuit technologies for a single-1.8 V flash memory

IEEE Symposium on VLSI Circuits, Digest of Technical Papers

Volumn , Issue , 1997, Pages 63-64

  Tanzawa, Toru ^a   Tanaka, Tomoharu ^a   Takeuchi, Ken ^a   Nakamura, Hiroshi ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; LEAKAGE CURRENTS; PULSE GENERATORS; TRANSISTORS;

CHARGE PUMP CIRCUITS; DYNAMIC RANDOM ACCESS MEMORY (DRAM); FLASH MEMORIES; STATIC RANDOM ACCESS MEMORY (SRAM);

NONVOLATILE STORAGE;

EID: 0031360876     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/vlsic.1997.623808     Document Type: Conference Paper

References (4)