Channeling of low-energy implanted ions through the poly-Si gate

IEEE Electron Device Letters

Volumn 20, Issue 7, 1999, Pages 357-359

  Hobler, G ^a,b   Bevk, J ^b   Agarwal, A ^c  

^a VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

^b LUCENT TECHNOLOGIES   (United States)

^c EATON CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; COMPUTER SIMULATION; GATES (TRANSISTOR); MONTE CARLO METHODS; OXIDES; PHOSPHORUS; SEMICONDUCTING BORON; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; THRESHOLD VOLTAGE;

BINARY COLLISION IMPLANT SIMULATOR; DOPANT PENETRATION; GATE OXIDES; IMPLANT ENERGY; ION CHANNELING; POLYSILICON GATE; SUBMICRON DEVICES;

ION IMPLANTATION;

EID: 0033164537     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.772375     Document Type: Article

References (15)

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