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0032089768
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''0 012-cc miniaturized GaAs p-pocket power MESFET amplifier operating with a single voltage supply for PUS applications
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June
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M Nagaoka, H Nagasawa, K K Kawakyu, K Honmyou, S Shinji, Y Kitaura, and N Uchitomi, ''0 012-cc miniaturized GaAs p-pocket power MESFET amplifier operating with a single voltage supply for PUS applicationsIEICE Trans Electron , vol E81-C, G, 985-992, June 1998
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Nagaoka, M.1
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Shinji, S.5
Kitaura, Y.6
Uchitomi, N.7
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2
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0031623847
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A 2-V operation RF front-end GaAs MMIC for PHS hand-set
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T Seshita, K Kawakyu, H Wakimoto, M Nagaoka, Y Kitaura, and N UchitomiA 2-V operation RF front-end GaAs MMIC for PHS hand-set1998 IEEE MTT-S Digest, 167-170 1998
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1998 IEEE MTT-S Digest
, pp. 167-170
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Seshita, T.1
Kawakyu, K.2
Wakimoto, H.3
Nagaoka, M.4
Kitaura, Y.5
Uchitomi, N.6
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3
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33746371849
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Electronic Toll Collection System in Charge Ways ARID Standard
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Association of Radio Industries and BusinessesElectronic Toll Collection System in Charge Ways ARID StandardARID STD-T155 1998
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(1998)
ARID STD-T155
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4
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0031358266
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A low-cost packaged MMIC chip set for 5 8 GHz ISM band applications
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M D Pollman, C Trantanella, M Shifrin, V Aparin, and D UptonA low-cost packaged MMIC chip set for 5 8 GHz ISM band applicationsIEEE RFIC Sympo Digest, 33-36 1997
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Pollman, M.D.1
Trantanella, C.2
Shifrin, M.3
Aparin, V.4
Upton, D.5
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5
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0032314281
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A 5 8 GHz, 3 0V single-supply power MMIC for electronic toll collection system
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T Kunihisa, S Yamamoto, M Nishijima, T Yokoyama, M Nishitsuji, K Nishii, and O IshikawaA 5 8 GHz, 3 0V single-supply power MMIC for electronic toll collection systemIEEE 1998 GaAs 1C Symposium Digest, 169-172 1998
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IEEE 1998 GaAs 1C Symposium Digest
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Kunihisa, T.1
Yamamoto, S.2
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Nishitsuji, M.5
Nishii, K.6
Ishikawa, O.7
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84897535544
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A highy-efficient GaAs power MESFET with P-pocket layers for linear power applications
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[G] K Nishihori, Y Kitaura, M Hirose, M Mihara, M Nagaoka, and N UchitomiA highy-efficient GaAs power MESFET with P-pocket layers for linear power applicationsElectrochemical Society Proceedings, vol 9C-15, 122-130 1990
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Nishihori, G.K.1
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Nagaoka, M.5
Uchitomi, N.6
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7
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0030699903
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High efficiency, low adjacent channel leakage 2-V operation GaAs power MESFET amplifier for 1 9-GHz digital cordless phone system
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M Nagaoka, H Wakimoto, K Kawakyu, K Nishihori, Y Kitaura, T Sasaki, A Kameyama, and N UchitomiHigh efficiency, low adjacent channel leakage 2-V operation GaAs power MESFET amplifier for 1 9-GHz digital cordless phone system1997 IEEE MTT-S Digest, 139-142 1997
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1997 IEEE MTT-S Digest
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Nagaoka, M.1
Wakimoto, H.2
Kawakyu, K.3
Nishihori, K.4
Kitaura, Y.5
Sasaki, T.6
Kameyama, A.7
Uchitomi, N.8
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0028195985
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Refractory \\'NX/W self-aligned gate GaAs power metal-semiconductor field-effect transistor for 1 9-GHz digital mobile communication system operating with a single low-voltage supply
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M Nagaoka, K Ishida, T Matsunaga, K Nishihori, T Hashimoto, M Yoshimura, Y Tanabe, M Mihara, Y Kitaura, and N UchitomiRefractory \\'NX/W self-aligned gate GaAs power metal-semiconductor field-effect transistor for 1 9-GHz digital mobile communication system operating with a single low-voltage supplyJpn J Appl Phys , vol 33 Pt l, lB, 707-770 1994
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Tanabe, Y.7
Mihara, M.8
Kitaura, Y.9
Uchitomi, N.10
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9
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0029292369
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A monolithic GaAs linear power amplifier operating with a single low 2 7-V supply for 1 9-GHz digital mobile communication applications
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April
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M Nagaoka, T Inoue, K Kawakyu, S Obayashi, H Kayano, E Takagi, Y Tanabe, M Yoshimura, K Ishida, Y Kitaura, and N UchitomiA monolithic GaAs linear power amplifier operating with a single low 2 7-V supply for 1 9-GHz digital mobile communication applicationsIEICE Trans Electron , vol E78-C, 4, 424-429, April 1995
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Nagaoka, M.1
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Kayano, H.5
Takagi, E.6
Tanabe, Y.7
Yoshimura, M.8
Ishida, K.9
Kitaura, Y.10
Uchitomi, N.11
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