In Situ measurements of the resist etch rate for submicron patterns

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 7 B, 1999, Pages 4478-4482

  Kawata, Hiroaki ^a   Fukuda, Hiroyoshi ^a   Matsunaga, Takashi ^a   Yasuda, Masaaki ^a   Murata, Kenji ^a  

^a Osaka Prefecture University   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; DIELECTRIC FILMS; DIFFRACTION GRATINGS; ELECTROMAGNETIC WAVE PROPAGATION; INTEGRATED CIRCUIT MANUFACTURE; IRRADIATION; LASER BEAMS; MAXWELL EQUATIONS; OXYGEN; PLASMA ETCHING; REFLECTION; SIMULATION;

ASPECT RATIO DEPENDENCE ETCHING; ETCHING DEPTH; IN SITU MEASUREMENT; LASER REFLECTION; REFLECTION INTENSITY; RESIST ETCH RATE;

REACTIVE ION ETCHING;

EID: 0033157539     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.4478     Document Type: Article

References (6)

1. R. A. Gottoscho, C. W. Jurgensen and D. J. Vitkavage: J. Vac. Sci. & Technol. B 10 (1992) 2133.
2. C. W. Jurgensen, R. S. Hutton and G. N. Taylor: J. Vac. Sci. & Technol. B 10 (1992) 2542.
3. R. Krukar, A. Kornblit, L. A. Clark, J. Kruskal, D. Lambert, E. A. Reitman and R. A. Gottoscho: J. Appl. Phys. 74 (1993) 3698.
4. H. Kawata, N. Kasamatsu and K. Murata: Jpn. J. Appl. Phys. 32 (1993) 3321.
5. R. Hisao, K. Yu, T. Pandhumsopom, H. Sanitini, S. A. Macdonald and N. Robertson: J. Electrochem. Soc. 144 (1997) 1008.
6. H. Wakabayashi, J. Yamakita, K. Matsumoto and M. Asai: IEICE C-I J 80 (1997) 387 [in Japanese].