Comparative study of the structural properties of nanocrystalline Ge:H plasma deposited onto the cathode and the anode using high hydrogen dilutions

Thin Solid Films

Volumn 346, Issue 1, 1999, Pages 91-95

  Poulsen, Per R ^a   Wang, Mingxiang ^a   Jun, Xu ^a,b   Li, Wei ^a   Chen, Kunji ^a   Wang, Guanghou ^a   Feng, Duan ^a  

^a NANJING UNIVERSITY   (China)

^b INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; ANODES; CATHODES; FILM PREPARATION; INFRARED SPECTROSCOPY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RAMAN SPECTROSCOPY; SEMICONDUCTING GERMANIUM; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

CATHODIC DEPOSITION; FILM CRYSTALLINITY;

NANOSTRUCTURED MATERIALS;

EID: 0033148346     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(98)01454-0     Document Type: Article

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