Study of stress induced leakage current by using high resolution measurements

Microelectronics Reliability

Volumn 39, Issue 6-7, 1999, Pages 797-802

  De Salvo, B ^a,b   Ghibaudo, G ^a   Pananakakis, G ^a   Guillaumot, B ^c   Reimbold, G ^b  

^a Grenoble INP Phelma   (France)

^b CEA LETI   (France)

^c STMICROELECTRONICS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY; ELECTRIC CURRENT MEASUREMENT; MATHEMATICAL MODELS; OXIDES; STRESSES; THICKNESS MEASUREMENT;

FLOATING GATE TECHNIQUE; HIGH RESOLUTION MEASUREMENT; STRESS INDUCED LEAKAGE CURRENT; VOLUME LIMITED CONDUCTION MECHANISM;

LEAKAGE CURRENTS;

EID: 0033147121     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(99)00103-1     Document Type: Article

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