Investigation of low field and high temperature SiO2 and ONO leakage currents using the floating gate technique

Journal of Non-Crystalline Solids

Volumn 245, Issue 1-3, 1999, Pages 104-109

  De Salvo, B ^a,b   Ghibaudo, G ^a   Pananakakis, G ^a   Guillaumot, B ^c  

^a CNRS   (France)

^b CEA LETI   (France)

^c STMICROELECTRONICS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELD EFFECTS; HETEROJUNCTIONS; MATHEMATICAL MODELS; SEMICONDUCTING SILICON COMPOUNDS; SILICA; SILICON NITRIDE;

FLOATING GATE TECHNIQUE; FOWLER-NORDHEIM MODELS;

LEAKAGE CURRENTS;

EID: 0032629572     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3093(98)00855-2     Document Type: Article

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