Lithography simulation with aerial image - variable threshold resist model

Microelectronic Engineering

Volumn 46, Issue 1, 1999, Pages 59-63

  Randall, John ^a   Gangala, Hareen ^b   Tritchkov, Alexander ^b  

^a TEXAS INSTRUMENTS   (Belgium)

^b NONE

Author keywords

[No Author keywords available]

Indexed keywords

COHERENT LIGHT; COMPUTER SIMULATION; FOCUSING; IMAGE ANALYSIS; MATHEMATICAL MODELS;

CRITICAL DIMENSION (CD); VARIABLE THRESHOLD RESIST MODELS (VTRM);

PHOTORESISTS;

EID: 0033132693     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(99)00015-5     Document Type: Article

References (4)

1. [1] Nick Cobb et.al. SPIE vol 2726 page 208 1996.
2. [2] Nick Cobb et al SPIE vol 3051 page 458 1997.
3. [3] A. Tritchkov, J. Stiriman, K. Ronse, Luc Vab den hove, "180nm KrF lithography using OPC based on empirical behavior modeling". Presented at EIPBN'99 in Chicago, to be published JVSTB.
4. [4] K. Ronse et.al. SPIE vol 2726 page 556 1996.