New approaches to optical proximity correction in photolithography

Microelectronic Engineering

Volumn 46, Issue 1, 1999, Pages 73-76

  Du, Jinglei ^a   Huang, Qizhong ^a   Su, Jingqin ^a   Guo, Yongkang ^a   Cui, Zheng ^b  

^a SICHUAN UNIVERSITY   (China)

^b RUTHERFORD APPLETON LABORATORY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; IMAGE ANALYSIS; MASKS; OPACITY;

LIGHT INTENSITY DISTRIBUTIONS; OPTICAL PROXIMITY CORRECTION (OPC);

PHOTOLITHOGRAPHY;

EID: 0033132118     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(99)00018-0     Document Type: Article

References (6)

1. [1] O.W.Otto, J.G.Garofalo, C.M.Yuan etc, Proc. SPIE, 2197, 278 (1994)
2. [2] N.Cobb and A.Zakhor, Proc. SPIE, 2726, 208, (1996)
3. [3] M. Born and E.Wolf, Principles of Optics, 6th ed., Ch. 10 (1980)
4. [4] C.Wu, U.S.Patent No.5,078,711 (1992)
5. [5] W.Daschner, P.Long, R.Stein, S.H.Lee and C.Wu, Proc. SPIE, 2689, 153 (1996)
6. [6] K.Reimer, H.J.Quenzer, M.Jurss and B.Wagner, SPIE, 3008, 279 (1997)