Modeling and simulation of membrane distortions in Next Generation Lithography (NGL) masks

Microelectronic Engineering

Volumn 46, Issue 1, 1999, Pages 23-26

  Engelstad, R ^a   Lovell, E ^a   Dicks, G ^a   Fisher, A ^a   Tejeda, R ^a  

^a UNIVERSITY OF WISCONSIN MADISON   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; FINITE ELEMENT METHOD; INTEGRATED CIRCUIT MANUFACTURE; LITHOGRAPHY; MATHEMATICAL MODELS;

MEMBRANE DISTORTIONS; NEXT GENERATION LITHOGRAPHY (NGL);

MASKS;

EID: 0033131671     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(99)00008-8     Document Type: Article

References (5)

1. 1. A. Fisher, R. Engelstad, E. Lovell and D. Puisto, J. Vac. Sci. Technol. B, Vol. 16, No. 6, pp. 3572-3576, 1998.
2. 2. A. Fisher, M. Sprague, R. Engelstad, D. Laird and S. Nash, SPIE, Vol. 3048, pp. 288-298, 1997.
3. 3. R. Tejeda, G. Frisque, R. Engelstad, E. Lovell, E. Haugeneder and H. Löschner, these proceedings.
4. 4. R. Tejeda, R. Engelstad, E. Lovell, E. Haugeneder and H. Löschner, these proceedings.
5. 5. G. Dicks, R. Engelstad, E. Lovell and J. Liddle, these proceedings.