Sub-100 nm structures by neutral atom lithography

Microelectronic Engineering

Volumn 46, Issue 1, 1999, Pages 105-108

  Schulze, Th ^a   Brezger, B ^a   Schmidt, P O ^a   Mertens, R ^a   Bell, A S ^a   Pfau, T ^a   Mlynek, J ^a  

^a UNIVERSITY OF KONSTANZ   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; ELECTRON ENERGY LEVELS; FOCUSING; MASKS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; SUBSTRATES;

NEUTRAL ATOM LITHOGRAPHY;

PHOTOLITHOGRAPHY;

EID: 0033131589     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(99)00026-X     Document Type: Article

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