Current-voltage characteristics of Si:B blocked impurity-band structures under conditions of hopping-transport-limited photoresponse

Semiconductors

Volumn 32, Issue 2, 1998, Pages 174-180

  Aronzon, B A ^a,b   Kovalev, D Yu ^a   Kozlov, A M ^c   Leotin, J ^d   Ryl'kov, V V ^b,c  

^a KURCHATOV INSTITUTE   (Russian Federation)

^b RUSSIAN ACADEMY OF SCIENCES   (Russian Federation)

^c INST OF RADIO ENG AND ELECTRONICS   (Russian Federation)

^d INSA   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0345920246     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1187339     Document Type: Article

References (24)

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