Threshold current temperature dependence of GaInP/(AlyGa 1-y)InP 670 nm quantum well lasers

Applied Physics Letters

Volumn 67, Issue , 1995, Pages 1265-

  Smowton, P M ^a   Blood, P ^a  

^a CARDIFF UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; ACTIVATION ENERGY; CALCULATIONS; ELECTRIC CURRENT MEASUREMENT; ELECTRONS; EMISSION SPECTROSCOPY; ENERGY GAP; FERMI LEVEL; SEMICONDUCTING GALLIUM COMPOUNDS; THERMAL EFFECTS;

ALUMINUM GALLIUM INDIUM PHOSPHIDE; ARRHENIUS ANALYSIS; CARRIER RECOMBINATION; GALLIUM INDIUM PHOSPHIDE; PHOTOVOLTAGE ABSORPTION SPECTROSCOPY; SPONTANEOUS EMISSION; THERMALLY ACTIVATED LOSS MECHANISMS; THRESHOLD CURRENT;

QUANTUM WELL LASERS;

EID: 0029357493     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.114392     Document Type: Article

References (0)