Fabrication of a 1.55-μm VCSEL and an InGaAsP-InP HBT from a common epitaxial structure

IEEE Photonics Technology Letters

Volumn 11, Issue 4, 1999, Pages 403-405

  Eriksson, Urban ^a   Evaldsson, Patrik ^a   Streubel, Klaus ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION IN SOLIDS; HETEROJUNCTION BIPOLAR TRANSISTORS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; ZINC;

VERTICAL CAVITY SURFACE EMITTING LASERS (VCSEL);

SEMICONDUCTOR LASERS;

EID: 0033116925     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.752529     Document Type: Article

References (8)

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