1.55 μm multiple quantum well laser and heterojunction bipolar transistor fabricated from the same structure utilizing zinc diffusion

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3006, Issue , 1997, Pages 145-152

  Eriksson, Urban ^a   Evaldsson, Patrik A ^a   Stålnacke, Björn ^a   Willén, Bo ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

HBT; InP; Monolithic; MQW laser; OEIC; Zinc diffusion

Indexed keywords

BICMOS TECHNOLOGY; BIPOLAR TRANSISTORS; DIFFUSION; EPITAXIAL LAYERS; FABRICATION; HETEROJUNCTION BIPOLAR TRANSISTORS; HETEROJUNCTIONS; INTEGRATED CIRCUITS; LASERS; OPTOELECTRONIC DEVICES; SEMICONDUCTOR QUANTUM WELLS; TRANSISTORS; WAVEGUIDES; ZINC;

HBT; INP; MONOLITHIC; MQW LASER; OEIC; ZINC DIFFUSION;

QUANTUM WELL LASERS;

EID: 0010258428     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.264212     Document Type: Conference Paper

References (9)

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