New crystal-orientation control technique for sputtered PZT-film utilizing topotaxial transformation for FeRAM capacitors

NEC Research and Development

Volumn 40, Issue 2, 1999, Pages 214-218

  Inoue, Naoya ^a   Matsuki, Takeo ^a   Hayashi, Yoshihiro ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; ANNEALING; CAPACITORS; CRYSTAL ORIENTATION; DIELECTRIC FILMS; FERROELECTRIC DEVICES; LEAD COMPOUNDS; NONVOLATILE STORAGE; PEROVSKITE; POLARIZATION; SPUTTER DEPOSITION; THERMAL EFFECTS;

FERROELECTRIC MEMORY TECHNOLOGY; LEAD ZIRCONATE TITANATE; PYROCHLORE; TOPOTAXIAL TRANSFORMATION;

RANDOM ACCESS STORAGE;

EID: 0033116734     PISSN: 0547051X     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (11)

1. 2," Appl. Phys. Lett., 65, 12, pp. 1522-1524, 1994.
2. 2 Electrodes," Jpn. J. Appl. Phys., 33, 9B, pp. 5207-5210, 1994.
3. 3 Thin-Film Preparation by Multitarget Magnetron Sputtering," Jpn. J. Appl. Phys., 31, 9B, pp. 3021-3024, 1992.
4. 3 Films Treated by Rapid Thermal Annealing," Jpn. J. Appl. Phys., 32, 9B, pp. 4118-4121, 1993.
5. 3 Thin Films by Reactive Sputtering Using an Alloy Target," Jpn. J. Appl. Phys., 32, 9B, pp. 4122-4125, 1993.
6. A. Fujisawa, et al., "Effect of Zr/Ti Ratio on Crystal Structure of Thin Lead Zirconate-Titanate Films Prepared by Reactive Sputtering," Jpn. J. Appl. Phys., 32, 9B, pp. 4048-4051, 1993.
7. 3 Films by RF Reactive Sputtering Using Zr/Ti+PbO Target," Jpn. J. Appl. Phys., 34, 9B, pp. 5120-5123, 1995.
8. 3 Ferroelectric Films by RF Sputtering on Large Substrate," Jpn. J. Appl. Phys., 35, 9B, pp. 4967-4971, 1996.
9. 3 Thin Films Prepared by RF Magnetron Sputtering," Jpn. J. Appl. Phys., 36, 9B, pp. 5793-5798, 1997.
10. 3 Ferroelectric Thin Film," Jpn. J. Appl. Phys., 36, 9B, pp. 5789-5792, 1997.
11. 2 for a Cover Film on Ferroelectric Capacitors," Ext. Abstr. 1996 Int. Conf. Solid State Devices & Materials, pp. 800-802, 1996.