Study of wet oxidized AlxGa1-xAs for integrated optics

IEEE Photonics Technology Letters

Volumn 11, Issue 4, 1999, Pages 436-438

  Bek, A ^a,b   Aydinli, A ^a,b   Champlain, J G ^a   Naone, R ^a   Dagli, N ^a  

^a University of California   (United States)

^b BILKENT UNIVERSITY   (Turkey)

Author keywords

[No Author keywords available]

Indexed keywords

INTEGRATED OPTICS; LIGHT POLARIZATION; OPTICAL WAVEGUIDES; OXIDATION; REFRACTIVE INDEX; SEMICONDUCTING ALUMINUM COMPOUNDS;

POLARIZATION SPLITTERS;

OPTICAL FILMS;

EID: 0033116719     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.752540     Document Type: Article

References (5)

1. 1 - xAs/AlGaAs quantum well heterostructures and superlattices," Appl. Phys. Lett., vol. 57, no. 26, pp. 2284-2846, 1990.
2. H. Q. Hou, K. D. Choquette, K. M. Geib, and B. E. Hammons, "High performance 1.06 μm selective oxidized vertical cavity surface emitting lasers with InGaAs/GaAs strain compensated quantum wells," IEEE Photon. Technol. Lett., vol. 9, pp. 1057-1069, Aug. 1997.
3. 1 - xAs," J. Appl. Phys., vol. 74, no. 6, pp. 3880-3885, Sept. 1993.
4. 1 - xAs layers," J. Appl. Phys., vol. 78, no. 8, pp. 5201-5203, Oct. 15, 1995.
5. P. Albrecht, M. Hamacher, H. Heindrich, D. Hoffmann, H. P. Nolting, and C. M. Weinert, "TE/TM mode splitters on InGaAs/InP," IEEE Photon. Technol. Lett., vol. 2, pp. 114-115, Feb. 1990.