Effects of post-annealing by the rapid thermal process on the characteristics of MOCVD-Cu/TiN/Si structures

Journal of Electronic Materials

Volumn 28, Issue 4, 1999, Pages 369-371

  Kim, Youn Tae ^a   Jun, Chi Hoon ^a   Kim, Dae Yong ^a  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CONDENSATION; COPPER; CRYSTAL MICROSTRUCTURE; DEGRADATION; GRAIN GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OXIDES; RAPID THERMAL ANNEALING; SILICON; SURFACES; TEMPERATURE; TITANIUM NITRIDE;

COPPER FILMS; POST ANNEALING;

METALLIC FILMS;

EID: 0033115120     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-999-0235-3     Document Type: Article

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