Characteristics of dynamic resistance in a heavily doped silicon semiconductor resistor

International Journal of Electronics

Volumn 86, Issue 3, 1999, Pages 269-279

  Kim, Jongdae ^a   Kim, Sang Gi ^a   Koo, Jin Gun ^a   Roh, Tae Moon ^a   Park, Hoon Soo ^b   Kim, Dae Yong ^a  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^b Uiduk University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRIC RESISTANCE; HEATING; MELTING; NEGATIVE RESISTANCE; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SEMICONDUCTOR PLASMAS; THERMOANALYSIS;

HEAVILY DOPED SEMICONDUCTOR RESISTORS; NEGATIVE TEMPERATURE COEFFICIENT OF RESISTANCE (NTCR); POSITIVE TEMPERATURE COEFFICIENT OF RESISTANCE (PTCR);

RESISTORS;

EID: 0033101329     PISSN: 00207217     EISSN: 13623060     Source Type: Journal    
DOI: 10.1080/002072199133409     Document Type: Article

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