Plasma electron density generated by a semiconductor bridge as a function of input energy and land material

IEEE Transactions on Electron Devices

Volumn 44, Issue 6, 1997, Pages 1022-1026

  Kim, Jongdae ^a   Nam, Kee Soo ^a   Jungling, K C ^b  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^b UNIVERSITY OF NEW MEXICO   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; CARRIER CONCENTRATION; ELECTRIC DISCHARGES; PLASMA DENSITY; PROBES; RESONATORS;

SEMICONDUCTOR BRIDGE (SCB) DEVICE;

SEMICONDUCTOR DEVICES;

EID: 0031169167     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.585561     Document Type: Article

References (9)

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