The invention of the transistor

Reviews of Modern Physics

Volumn 71, Issue SUPPL. 2, 1999, Pages

  Riordan, Michael ^a   Hoddeson, Lillian ^b   Herring, Conyers ^c  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^c STANFORD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0033100614     PISSN: 00346861     EISSN: None     Source Type: Journal    
DOI: 10.1103/revmodphys.71.s336     Document Type: Review

References (62)

1. Bardeen, J., 1936, "Theory of the work function II: the surface double layer," Phys. Rev. 49, 653-663.
2. Bardeen, J., 1946, Bell Labs Notebook No. 20780 (AT&T Archives, Warren, NJ).
3. Bardeen, J., 1947, "Surface states and rectification at a metal-semi-conductor contact," Phys. Rev. 71, 717-727.
4. Bardeen, J., 1957, "Semiconductor research leading to the point-contact transistor," in Les Prix Nobel en 1956, edited by K. M. Siegbahn et al. (P. A. Nordstet & Sons, Stockholm), pp. 77-99; edited and reprinted in Science 126, 105-112.
5. Bardeen, J., 1957, "Semiconductor research leading to the point-contact transistor," in Les Prix Nobel en 1956, edited by K. M. Siegbahn et al. (P. A. Nordstet & Sons, Stockholm), pp. 77-99; edited and reprinted in Science 126, 105-112.
6. Bardeen, J., and W. H. Brattain, 1948a, "Three-electrode circuit element utilizing semiconductive materials," US Patent No. 2,524,035 (Washington, DC).
7. Bardeen, J., and W. H. Brattain, 1948b, "The transistor, a semi-conductor triode," Phys. Rev. 74, 230-231.
8. Bardeen, J., and W. H. Brattain, 1949, "Physical principles involved in transistor action," Phys. Rev. 75, 1208-1225.
9. Brattain, W. H., 1947a, "Evidence for surface states on semi-conductors from change in contact potential on illumination," Phys. Rev. 72, 345.
10. Brattain, W. H., 1947b, Bell Labs Notebook No. 18194 (AT&T Archives, Warren, NJ).
11. Brattain, W. H., 1947c, Bell Labs Notebook No. 21780 (AT&T Archives, Warren, NJ).
12. Brattain, W. H., 1951, "The copper oxide rectifier," Rev. Mod. Phys. 23, 203-212.
13. Brattain, W. H., 1968, "Genesis of the transistor," Phys. Teach. 6, 109-114.
14. Brattain, W. H., and J. Bardeen, 1948, "Nature of the forward current in germanium point contacts," Phys. Rev. 74, 231-232.
15. Braun, E., and S. MacDonald, 1978, Revolution in Miniature: The History and Impact of Semiconductor Electronics (Cambridge University Press, Cambridge).
16. Davydov, B., 1938, "On the rectification of current at the boundary between two semi-conductors," C. R. (Dokl.) Acad. Sci. URSS 20, 279-282; "On the theory of solid rectifiers," 1938, 20, 283-285.
17. Davydov, B., 1938, "On the rectification of current at the boundary between two semi-conductors," C. R. (Dokl.) Acad. Sci. URSS 20, 279-282; "On the theory of solid rectifiers," 1938, 20, 283-285.
18. Frenkel, J., 1933, "Conduction in poor electronic conductors," Nature (London) 132, 312-313.
19. Frenkel, J., 1936, "On the absorption of light and the trapping of electrons and positive holes in crystalline dielectrics," Phys. Z. Sowjetunion 9, 158-186.
20. Goldstein, A., 1993, "Finding the right material: Gordon Teal as inventor and manager," in Sparks of Genius: Portraits of Electrical Engineering, edited by F. Nebeker (IEEE Press, New York), pp. 93-126.
21. Guerlac, H., 1987, Radar in World War II (AIP Press, New York).
22. Haynes, J. R., and W. Shockley, 1949, "Investigation of hole injection in transistor action," Phys. Rev. 75, 691.
23. Henriksen, P. W., 1987, "Solid state physics research at Purdue," Osiris 2:3, 237-260.
24. Herring, C., 1957, "The significance of the transistor discovery for physics," paper presented at a Bell Labs symposium on the Nobel prize (unpublished).
25. Herring, C., 1992, "Recollections from the early years of solid-state physics," Phys. Today 45(4), 26-33.
26. Herring, C., M. Riordan, and L. Hoddeson, "Boris Davydov's theoretical work on minority carriers," n.d. (unpublished).
27. Hoddeson, L., 1981, "The discovery of the point-contact transistor," Hist. Stud. Phys. Sci. 12, 41-76.
28. Hoddeson, L., G. Baym, and M. Eckert, 1987, "The development of the quantum mechanical theory of metals," Rev. Mod. Phys. 59, 287-327.
29. Hoddeson, L., et al., 1992, Out of the Crystal Maze: Chapters in the History of Solid State Physics (Oxford University Press, New York).
30. Hoddeson, L., et al., 1993, Critical Assembly: A Technical History of Los Alamos during the Oppenheimer Years, 1943-45 (Cambridge University Press, New York).
31. Holonyak, N., 1992, "John Bardeen and the point-contact transistor," Phys. Today 45(4), 36-43.
32. Mott, N. F., 1939, "The theory of crystal rectifiers," Proc. R. Soc. London, Ser. A 171, 27-38.
33. Mott, N. F., and H. Jones, 1936, Theory of the Properties of Metals and Alloys (Oxford University Press, Oxford).
34. Pearson, G., 1947, Bell Labs Notebook No. 20912 (AT&T Archives, Warren, NJ).
35. Pickering, A., 1984, Constructing Quarks: A Sociological History of Particle Physics (Edinburgh University Press, Edinburgh).
36. Riordan, M., and L. Hoddeson, 1997a, Crystal Fire: The Birth of the Information Age (W. W. Norton, New York).
37. Riordan, M., and L. Hoddeson, 1997b, "Minority carriers and the first two transistors," in Facets: New Perspectives on the History of Semiconductors, edited by A. Goldstein and W. Aspray (IEEE Center for the History of Electrical Engineering, New Brunswick, NJ), pp. 1-33.
38. Riordan, M., and L. Hoddeson, 1997c, "The origins of the pn junction," IEEE Spectr. 34(6), 46-51.
39. Ross, I., 1998, "The invention of the transistor," Proc. IEEE 86, 7-28.
40. Scaff, J., 1970, "The role of metallurgy in the technology of electronic materials," Metall. Trans. A 1, 561-573.
41. Scaff, J., and R. S. Ohl, 1947, "The development of silicon crystal rectifiers for microwave radar receivers," Bell Syst. Tech. J. 26, 1-30.
42. Schottky, W., 1939, "Zur halbleitertheorie der sperrschict- und spitzengleichrichter," Z. Phys. 113, 367-414.
43. Seitz, F., 1994, On the Frontier: My Life in Science (AIP Press, New York).
44. Seitz, F., 1995, "Research on silicon and germanium in World War II," Phys. Today 48(1), 22-27.
45. Seitz, F., and N. Einspruch, 1998a, Electronic Genie: The Tangled History of Silicon (University of Illinois Press, Urbana).
46. Seitz, F., and N. Einspruch, 1998b, "The tangled history of silicon and electronics," in Semiconductor Silicon/1998, edited by H. R. Huff, U. Gösele, and H. Tsuya (Electrochemical Society, Pennington, NJ), pp. 69-98.
47. Shive, J. N., 1948, Bell Labs Notebook No. 21869 (AT&T Archives, Warren, NJ).
48. Shive, J. N., 1949, "The double-surface transistor," Phys. Rev. 75, 689-690.
49. Shockley, W., 1936, "Electronic energy bands in sodium chloride," Phys. Rev. 50, 754-759.
50. Shockley, W., 1939, "On the surface states associated with a periodic potential," Phys. Rev. 56, 317-323.
51. Shockley, W., 1945, Bell Labs Notebook No. 20455 (AT&T Archives, Warren, NJ).
52. Shockley, W., 1949, "The theory of p-n junctions in semiconductors and p-n junction transistors," Bell Syst. Tech. J. 28, 435-489.
53. Shockley, W., 1950, Electrons and Holes in Semiconductors, with Applications to Transistor Electronics (Van Nostrand, New York).
54. Shockley, W., 1973, in Proceedings of the Second European Solid State Device Research Conference (Institute of Physics, London), pp. 55-75.
55. Shockley, W., 1976, "The path to the conception of the junction transistor," IEEE Trans. Electron Devices ED-23, 597-620.
56. Shockley, W., M. Sparks, and G. Teal, 1951, "P-N junction transistors," Phys. Rev. 83, 151-162.
57. Tamm, I., 1932, "Uber eine mögliche art der elektronenbindung an kristalloberflächen," Phys. Z. Sowjetunion 1, 733-746.
58. Teal, G., 1976, "Single crystals of germanium and silicon -basic to the transistor and integrated circuit," IEEE Trans. Electron Devices ED-23, 621-639.
59. Torrey, H. C., and C. A. Whitmer, 1948, Crystal Rectifiers (McGraw-Hill, New York; republished in 1964 by Boston Technical Publishers, Boston).
60. Weiner, C., 1973, "How the transistor emerged," IEEE Spectr. 10(1), 24-33.
61. Wilson, A. H., 1931, "The theory of electronic semi-conductors," Proc. R. Soc. London, Ser. A 133, 458-491; 1931, "The theory of electronic semi-conductors - II," 134, 277-287.
62. Wilson, A. H., 1931, "The theory of electronic semi-conductors," Proc. R. Soc. London, Ser. A 133, 458-491; 1931, "The theory of electronic semi-conductors - II," 134, 277-287.