NiSi2 layers grown on Si (111) by MBE and SPE

Journal of Crystal Growth

Volumn 81, Issue 1-4, 1987, Pages 470-475

  Von Kanel H ^a   Graf, T ^a   Henz, J ^a   Ospelt, M ^a   Wachter, P ^a  

^a ETH ZURICH   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

MOLECULAR BEAM EPITAXY; SEMICONDUCTING SILICON;

HIGH QUALITY THICK FILMS; PHASE IDENTIFICATION; SOLID PHASE EPITAXY (SPE); SURFACE RECONSTRUCTIONS; ULTRATHIN FILMS;

NICKEL COMPOUNDS;

EID: 0022667437     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(87)90435-0     Document Type: Article

References (12)

1. Si(111) surface structures by glancing-incidence high-energy electron diffraction
2. Formation of thin films of NiSi: Metastable structure, diffusion mechanisms in intermetallic compounds
3. (Invited) Epitaxial Silicide Films for Integrated Circuits and Future Devices