Raman scattering study of GaAs: as films lifted off GaAs substrate

Journal of Physics D: Applied Physics

Volumn 32, Issue 6, 1999, Pages 629-631

  Jiang, De Sheng ^a   Li, Xue Ping ^a   Sun, Bao Quan ^a   Han, He Xiang ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; ARSENIC; EPITAXIAL GROWTH; LATTICE CONSTANTS; LOW TEMPERATURE OPERATIONS; PHOTONS; RAMAN SCATTERING; RAPID THERMAL ANNEALING; SEMICONDUCTING FILMS; SUBSTRATES;

LOW TEMPERATURE GROWN FILMS; PHOTON SCATTERING; RAMAN SPECTROMETERS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0033098709     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/32/6/005     Document Type: Article

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