Interface state density in n-MOSFETs with Si-implanted gate oxide measured by subthreshold slope analysis

Solid-State Electronics

Volumn 43, Issue 3, 1999, Pages 565-573

  Kameda, Etsumasa ^a   Matsuda, Toshihiro ^b   Yasuda, Masahiro ^b   Ohzone, Takashi ^b  

^a TOYAMA NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

^b TOYAMA PREFECTURAL UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ENERGY GAP; INTERFACES (MATERIALS); ION IMPLANTATION; OXIDATION; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MODELS; THRESHOLD VOLTAGE;

INTERFACE STATE DENSITY; SILICON-IMPLANTED GATE OXIDES; SUBTHRESHOLD SLOPE ANALYSIS;

MOSFET DEVICES;

EID: 0033098496     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(98)00300-1     Document Type: Article

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