MOVPE growth of ZnSxSe1-x/GaAs(1 0 0) using ditertiarybutylselenium, tertiarybutylmercaptan and dimethylzinc triethylamine as precursors

Journal of Crystal Growth

Volumn 184-185, Issue , 1998, Pages 149-152

  Thiandoume, C ^a   Ka, O ^b   Lusson, A ^a   Cohen, C ^a   Bouanani, A ^a   Rommeluere, M ^a   Tromson Carli, A ^a   Gorochov, O ^a  

^a CNRS   (France)

^b UNIVERSITÉ CHEIKH ANTA DIOP   (Senegal)

Author keywords

MOVPE; Photoluminescence; QW; Sulfur content; X ray; ZnSxSe1 x on GaAs

Indexed keywords

EID: 0039980772     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)80312-6     Document Type: Article

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