Slow positron annihilation studies of vacancy-type defects in the near-surface region of Cu and Nb before and after wear

Applied Physics A: Materials Science and Processing

Volumn 68, Issue 3, 1999, Pages 325-327

  Gu, H D ^a   Wang, T M ^b   Wang, W J ^b,c   Leung, K M ^a   Chung, C Y ^a  

^a CITY UNIVERSITY OF HONG KONG   (Hong Kong)

^b LANZHOU UNIVERSITY   (China)

^c BEIHANG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER; CRYSTAL DEFECTS; NIOBIUM;

POSITRON ANNIHILATION; VACANCY TYPE DEFECTS;

SEMICONDUCTOR MATERIALS;

EID: 0033097798     PISSN: 09478396     EISSN: None     Source Type: Journal    
DOI: 10.1007/s003390050896     Document Type: Article

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