Development of a diffusion barrier layer* for silicon and carbon in molybdenum-a physical vapor deposition approach

Metallurgical and Materials Transactions A: Physical Metallurgy and Materials Science

Volumn 30, Issue 13, 1999, Pages 799-806

  Govindarajan, S ^a,b   Moore, J J ^a   Disam, J ^a   Suryanarayana, C ^c  

^a Department of Metallurgical and Materials Engineering   (United States)

^b Whiteoak Semiconductors Ltd   (United States)

^c SCHOTT AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS LAYER; BARRIER LAYERS; COMPOSITE TARGET; COMPOSITE THIN FILMS; DIFFUSION BARRIER LAYERS; HIGH TEMPERATURE; MOLYBDENUM SUBSTRATE; NITROGEN ATMOSPHERES; OXIDATION RESISTANT; OXIDATION RESISTANT COATING; QUATERNARY SYSTEMS; RADIO-FREQUENCY SPUTTERING; RF-MAGNETRON SPUTTERING;

AMORPHOUS CARBON; ARGON; CARBON FILMS; COMPOSITE FILMS; DIFFUSION BARRIERS; DIFFUSION COATINGS; MAGNETRON SPUTTERING; MOLYBDENUM; OXIDATION; OXIDATION RESISTANCE; PHYSICAL VAPOR DEPOSITION; SEMICONDUCTING SILICON COMPOUNDS; SILICIDES; SILICON CARBIDE; STOICHIOMETRY; SUBSTRATES; SYNTHESIS (CHEMICAL); TANTALUM; AMORPHOUS FILMS; CARBON; DIFFUSION IN SOLIDS; PROTECTIVE COATINGS; SILICON; THERMODYNAMIC STABILITY; VAPOR DEPOSITION;

AMORPHOUS SILICON; MOLYBDENUM;

PHYSICAL VAPOR DEPOSITION (PVD);

EID: 0033097627     PISSN: 10735623     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11661-999-1012-x     Document Type: Article

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