Electrical Properties and Interface Chemistry in the Ti/3C-SiC System

IEEE Transactions on Electron Devices

Volumn 46, Issue 3, 1999, Pages 444-448

  Touati, Ferid ^a,b   Takemasa, Kiminori ^a,b   Saji, Manabu ^a,b  

^a Department of Mechanical Technology   (Saudi Arabia)

^b NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Carbides; Ohmic contacts; SiC; Suicides; Ti

Indexed keywords

ANNEALING; AUGER ELECTRON SPECTROSCOPY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC RESISTANCE; OHMIC CONTACTS; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; TITANIUM CARBIDE; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

TITANIUM SILICIDES;

SEMICONDUCTING FILMS;

EID: 0033097167     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.748860     Document Type: Article

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