A simple analytical model of thermal oxidation of silicon

Solid-State Electronics

Volumn 43, Issue 2, 1999, Pages 409-411

  Rinaldi, N F ^a  

^a UNIVERSITY OF NAPLES FEDERICO II   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

MATHEMATICAL MODELS; OXIDES; THERMOOXIDATION;

OXIDATION RATE;

SEMICONDUCTING SILICON;

EID: 0033079931     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(98)00270-6     Document Type: Article

References (8)

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5. Massoud HZ, Plummer J. J Appl Phys 1987;62:3416-23.
6. Deal BE, Grove AS. J Appl Phys 1965;36:3770.
7. Ghandhi SK. VLSI fabrication principles. New York: Wiley, 1983.
8. Sze SM. VLSI technology. New York: McGraw-Hill, 1988.