A novel programming method for high speed, low voltage flash E2PROM cells

Solid-State Electronics

Volumn 39, Issue 7, 1996, Pages 981-989

  Ranaweera, J ^a   Kalastirsky, I ^a   Gulersen, E ^a   Ng, W T ^a   Salama, C A T ^a  

^a UNIVERSITY OF TORONTO   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRIC BREAKDOWN; ELECTRONS; SEMICONDUCTING BORON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DEVICE TESTING; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS;

AVALANCHE BREAKDOWN; HOT ELECTRON INJECTION; NOVEL PROGRAMMING METHOD; TWO DIMENSIONAL DEVICE SIMULATION; ZENER BREAKDOWN;

MOSFET DEVICES;

EID: 0030193535     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(96)00002-0     Document Type: Review

References (8)

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3. 2PROM cell suitable for 5-V operation, MSc Thesis, University of Toronto (1995).
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5. J. Ranaweera, I. Kalastirsky, E. Gulersen, W. T. Ng and C. A. T. Salama, U.S. Patent applied for (1995).
6. D. A. Neamen, Semiconductor Physics and Devices, Chap. 8, R. D. Irwin, Illinois (1992).
7. E. S. Yang, Microelectronic Devices, Chap. 3. McGraw-Hill, New York (1988).
8. A. Bergemont, H. Haggag, L. Anderson, E. Shacham and G. Wolstenholme, IEDM Tech. Dig. 15 (1993).