Wide-band transimpedance amplifiers using AlGaAs/InxGa1-xAs pseudomorphic 2-D EG FET's

IEEE Journal of Solid-State Circuits

Volumn 33, Issue 10, 1998, Pages 1559-1562

  Suzuki, Yasuyuki ^a   Honjo, Kazuhiko ^a  

^a NEC CORPORATION   (Japan)

Author keywords

Broad band amplifiers; MODFET amplifiers; MODFET's; Monolithic integrated circuits; Noise

Indexed keywords

BANDWIDTH; ELECTRIC RESISTANCE; ELECTRON GAS; FIELD EFFECT TRANSISTORS; MONOLITHIC INTEGRATED CIRCUITS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SPURIOUS SIGNAL NOISE;

MOLE FRACTION;

BROADBAND AMPLIFIERS;

EID: 0032188506     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/4.720404     Document Type: Article

References (9)

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