Time-resolved near-field optics: Exciton transport in semiconductor nanostructures

Journal of Microscopy

Volumn 194, Issue 2-3, 1999, Pages 393-400

  Richter, A ^a   Suptitz M ^a   Lienau, Ch ^a   Elsaesser, T ^a   Ramsteiner, M ^b   Notzel R ^b   Ploog, K H ^b  

^a MAX BORN INSTITUT   (Germany)

^b PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

Exciton transport; GaAs; Low temperatures; Luminescence spectroscopy; Near field microscopy; Picosecond time resolution; Quantum wire

Indexed keywords

EXCITONS; GALLIUM ARSENIDE; III-V SEMICONDUCTORS; LUMINESCENCE; NANOWIRES; QUANTUM CHEMISTRY; SEMICONDUCTING GALLIUM; TEMPERATURE; WIRE;

EXCITON TRANSPORT; LOWS-TEMPERATURES; LUMINESCENCE SPECTROSCOPY; NEAR FIELD MICROSCOPY; NEAR FIELD OPTICS; PICOSECOND TIME; PICOSECOND TIME RESOLUTION; REAL-SPACE TRANSFERS; TIME-RESOLUTION; TIME-RESOLVED;

SEMICONDUCTOR QUANTUM WIRES;

GALLIUM ARSENIDE; NANOPARTICLE;

CALCULATION; CONFERENCE PAPER; DIFFUSION; EXCITATION; LUMINESCENCE; OPTICAL RESOLUTION; PRIORITY JOURNAL; QUANTUM MECHANICS; SCANNING NEAR FIELD OPTICAL MICROSCOPY; SEMICONDUCTOR; SPECTROSCOPY; TEMPERATURE DEPENDENCE; TIME;

EID: 0032989561     PISSN: 00222720     EISSN: None     Source Type: Journal    
DOI: 10.1046/j.1365-2818.1999.00543.x     Document Type: Conference Paper

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