Electronic structure analysis of (In, Ga, Al) N heterostructures on the nanometre scale using EELS

Journal of Microscopy

Volumn 194, Issue 1, 1999, Pages 79-83

  Lakner, H ^a   Rafferty, B ^b   Brockt, Georg ^a  

^a UNIVERSITY OF DUISBURG ESSEN   (Germany)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

AlN; Dielectric optical properties; EELS; GaN; InGaN; STEM

Indexed keywords

ELECTRON ENERGY LOSS SPECTROSCOPY; ELECTRON SCATTERING; ELECTRONIC STRUCTURE; ENERGY DISSIPATION; ENERGY GAP; GALLIUM NITRIDE; III-V SEMICONDUCTORS; IMAGE RESOLUTION; OPTICAL PROPERTIES; SEMICONDUCTOR ALLOYS; TRANSMISSION ELECTRON MICROSCOPY; WIDE BAND GAP SEMICONDUCTORS;

DIELECTRIC/OPTICAL PROPERTY; ELECTRON ENERGY-LOSS SPECTROSCOPIES; ELECTRONIC.STRUCTURE; LOCAL ELECTRONIC STRUCTURES; NANOMETRES; SPATIAL RESOLUTION; SPECTRA'S; STEM; STRUCTURE ANALYSIS; ZERO LOSS PEAKS;

ALUMINUM NITRIDE;

ARTICLE; ELECTRON ENERGY LOSS SPECTROSCOPY; IMAGING; PRIORITY JOURNAL; SCANNING ELECTRON MICROSCOPY; SIGNAL PROCESSING; TRANSMISSION ELECTRON MICROSCOPY;

EID: 0032965744     PISSN: 00222720     EISSN: None     Source Type: Journal    
DOI: 10.1046/j.1365-2818.1999.00453.x     Document Type: Article

References (11)

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