Local electronic structure of defects in GaN from spatially resolved electron energy-loss spectroscopy

Materials Research Society Symposium - Proceedings

Volumn 482, Issue , 1997, Pages 763-768

  Natusch, M K H ^a   Botton, G A ^a   Broom, R F ^a   Brown, P D ^a   Tricker, D M ^a   Humphreys, C J ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; ELECTRON ENERGY LOSS SPECTROSCOPY; ELECTRONIC DENSITY OF STATES; ELECTRONIC STRUCTURE; OPTICAL PROPERTIES; SCANNING; TRANSMISSION ELECTRON MICROSCOPY; VACUUM;

WURTZITE GALLIUM NITRIDE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0031347977     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-482-763     Document Type: Conference Paper

References (7)