Optimization of the inlet velocity profile for uniform epitaxial growth in a vertical metalorganic chemical vapor deposition reactor

International Journal of Heat and Mass Transfer

Volumn 42, Issue 22, 1999, Pages 4143-4152

  Cho, W K ^a   Choi, D H ^a   Kim, M U ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHEBYSHEV APPROXIMATION; CHEMICAL REACTORS; EQUATIONS OF MOTION; INTAKE SYSTEMS; OPTIMIZATION; POLYNOMIALS; REYNOLDS NUMBER; TEMPERATURE; VELOCITY MEASUREMENT;

BOUYANCY DRIVEN SECONDARY FLOW; CHEBYSHEV POLYNOMIAL; GROWTH RATE UNIFORMITY; INLET VELOCITY PROFILE; METALORGANIC CHEMICAL VAPOR DEPOSITION REACTOR;

EPITAXIAL GROWTH;

FILM; REACTOR; SEMICONDUCTOR; VAPOR DEPOSITION;

EID: 0032833310     PISSN: 00179310     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0017-9310(99)00085-X     Document Type: Article

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