The growth of epitaxial aluminium on As containing compound semiconductors

Journal of Crystal Growth

Volumn 196, Issue 1, 1999, Pages 1-12

  Pilkington, S J ^a   Missous, M ^a  

^a UNIVERSITY OF MANCHESTER   (United Kingdom)

Author keywords

Aluminium; Compound; Epitaxial; Semiconductor; Structural

Indexed keywords

ALUMINUM; CHEMICAL VAPOR DEPOSITION; CRYSTAL ORIENTATION; MOLECULAR BEAM EPITAXY; MORPHOLOGY; NUCLEATION; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SINGLE CRYSTALS; STRAIN;

HILLOCK-VALLEY MORPHOLOGY; INDIUM ALUMINUM ARSENIDE; PLATEAU-VALLEY CRYSTAL;

SEMICONDUCTOR GROWTH;

EID: 0032784437     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00784-2     Document Type: Article

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