Generation at point-of-use of BHF

Solid State Phenomena

Volumn 65-66, Issue , 1999, Pages 267-270

  Verhaverbeke, S ^a   Liu, L ^a  

^a CFM Technologies   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIUM COMPOUNDS; ETCHING; PH EFFECTS; SEMICONDUCTING SILICON; SILICA;

AMMONIUM HYDROXIDE; ZETA POTENTIAL;

HYDROFLUORIC ACID;

EID: 0032777050     PISSN: 10120394     EISSN: 16629779     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/SSP.65-66.267     Document Type: Conference Paper

References (8)

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4. H. Kikuyama, M. Waki, I. Kawanabe, M. Mtyashita, T. Yabunc, N. Miki, J. Takano and T. Ohmi. J. Elcctrochcm. Soc. 139, 2239(1992).
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6. M. Dohmen, R. Wijburg and R. Giriih. ‘The impact of LOCOS Formation on the Gale Oxide Integrity." in Proceeding of the Second International Symposium on Ultra-Clean Processing of Silicon Surfaces (ACCO, Leuven. Belgium, 1994). p. 315.
7. T. Roche, S. Adler, R. Cosway, S. Schauer and Lisa Liu, The effect of Metallic Contamination and Surface Roughness on Gale Oxide Strength and Product Yield. “in Cleaning Technology in Semiconductor Device Manufacturing IV (The Electrochemical Society, Pennington, NJ. 1996), p. 300.
8. H Kikuyama, N Miki, K. Saka, I. Takano, I. Kawanahe, M. Miyiihiu and T. Ohirn. IEEE Tram On Semic. Manuf.. Vol. 4. no. 1,26(1991).