Application of dynamical optical reflection thermography (DORT) for detecting of dark current inhomogeneity in semiconductor devices

Applied Surface Science

Volumn 137, Issue 1-3, 1999, Pages 45-49

  Litvinenko, S V ^a   Kilchitskaya, S S ^a   Skryshevsky, V A ^a,b   Strikha, V I ^a   Laugier, A ^b  

^a TARAS SHEVCHENKO NATIONAL UNIVERSITY OF KYIV   (Ukraine)

^b UNIVERSITÉ DE LYON   (France)

Author keywords

Dark current inhomogeneities; Dynamical optical reflection thermography; Semiconductor devices

Indexed keywords

CRYSTAL DEFECTS; ELECTRIC CURRENTS; LIGHT REFLECTION; SOLAR CELLS; THERMOGRAPHY (TEMPERATURE MEASUREMENT);

DARK CURRENTS; DYNAMICAL OPTICAL REFLECTION THERMOGRAPHY (DORT);

SEMICONDUCTOR DEVICES;

EID: 0032762474     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0169-4332(98)00487-5     Document Type: Article

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