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Volumn 65-66, Issue , 1999, Pages 291-294

The optimization of the cleaning to remove residual bonds of Si-C and Si-F after fluorocarbon plasma Etch on the silicon surface

Author keywords

Fluorocarbon; Plasma etch; Polymer; Post cleaning; Residue; Si C; Si F; Silicon; XPS

Indexed keywords

AMMONIUM HYDROXIDE; CLEANING; ETCHING; FLUOROCARBONS; HYDROFLUORIC ACID; OXYGEN; PLASMA ETCHING; POLYMERS; SILICON; SILICON WAFERS; X RAY PHOTOELECTRON SPECTROSCOPY; AMMONIUM COMPOUNDS; CHEMICAL BONDS; HYDROGEN PEROXIDE; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

EID: 0032761131     PISSN: 10120394     EISSN: 16629779     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/SSP.65-66.291     Document Type: Conference Paper
Times cited : (3)

References (14)
  • 13
    • 0030650348 scopus 로고    scopus 로고
    • Low-Dielectric Constant Materials
    • G. Lucovsky, H. Yang. In:Low-Dielectric Constant Materials, MRS Symp.Proc., v.443, p.3, 1997.
    • (1997) MRS Symp.Proc , vol.443
    • Lucovsky, G.1    Yang, H.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.