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Volumn 65-66, Issue , 1999, Pages 291-294
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The optimization of the cleaning to remove residual bonds of Si-C and Si-F after fluorocarbon plasma Etch on the silicon surface
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Author keywords
Fluorocarbon; Plasma etch; Polymer; Post cleaning; Residue; Si C; Si F; Silicon; XPS
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Indexed keywords
AMMONIUM HYDROXIDE;
CLEANING;
ETCHING;
FLUOROCARBONS;
HYDROFLUORIC ACID;
OXYGEN;
PLASMA ETCHING;
POLYMERS;
SILICON;
SILICON WAFERS;
X RAY PHOTOELECTRON SPECTROSCOPY;
AMMONIUM COMPOUNDS;
CHEMICAL BONDS;
HYDROGEN PEROXIDE;
PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;
FLUOROCARBON PLASMA;
FLUOROCARBON RESIDUES;
OXIDE STRUCTURES;
PEROXIDE MIXTURE;
POST-ETCH CLEANING;
RESIDUE;
SILICON ETCHING;
SILICON SURFACES;
SILICON COMPOUNDS;
SURFACE CLEANING;
AMMONIUM HYDROXIDE;
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EID: 0032761131
PISSN: 10120394
EISSN: 16629779
Source Type: Book Series
DOI: 10.4028/www.scientific.net/SSP.65-66.291 Document Type: Conference Paper |
Times cited : (3)
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References (14)
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