High-Temperature Electrical Characteristics of GaAs MESFET’s (25-400°C)

IEEE Transactions on Electron Devices

Volumn 39, Issue 7, 1992, Pages 1551-1557

  Shoucair, F S ^a   Ojala, Pekka K ^b  

^a BROWN UNIVERSITY   (United States)

^b TAMPERE UNIVERSITY OF TECHNOLOGY   (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

INTEGRATED CIRCUIT MANUFACTURE; SEMICONDUCTING GALLIUM ARSENIDE--THERMAL EFFECTS;

HIGH SPEED INTEGRATED CIRCUITS;

SEMICONDUCTOR DEVICES, MESFET;

EID: 0026896254     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.141218     Document Type: Article

References (13)

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