Extended defect formation and the flux of interstitials in Si-ion implanted silicon

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 127-128, Issue , 1997, Pages 94-97

  Simpson, T W ^a   Mitchell, I V ^a  

^a UNIVERSITY OF WESTERN ONTARIO   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; ION IMPLANTATION; RADIATION DAMAGE; SEMICONDUCTING BORON; SEMICONDUCTOR DOPING; TEMPERATURE CONTROL;

INTERSTITIAL FLUXES; ION FLUENCE;

SILICON WAFERS;

EID: 0031547683     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(96)00858-0     Document Type: Article

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