Oxygen precipitation in Czochralski-grown silicon wafers during hydrogen annealing

Applied Physics Letters

Volumn 68, Issue 1, 1996, Pages 49-50

  Izunome, Koji ^a   Shirai, Hiroshi ^a   Kashima, Kazuhiko ^a   Yoshikawa, Jun ^a   Hojo, Akimichi ^a  

^a Nissei Bldg   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 3342941042     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116752     Document Type: Article

References (6)

1. Y. Matsushita, M. Wakatuski, and Y. Saito, Extended Abstracts of the 18th Conference on Solid State Devices and Materials, Yokohama, 1986 (J. Soc. Appl. Phys., Tokyo, 1986), p. 529.
2. S. Kurihara, Y. Kirino, Y. Matsushita, and K. Yamabe, Toshiba Rev. 49, 387 (1994).
3. H. Tsuya, Oxygen in Silicon, edited by F. Shimura (Academic, Boston, 1994), pp. 661.
4. K. Moriya, K. Hirai, K. Kashima, and S. Takasu, J. Appl. Phys. 66, 5267 (1989).
5. J. Osaka, N. Inoue, and K. Wada, Appl. Phys. Lett. 36, 288 (1980).
6. J. Burke, The Kinetics of Phase Transformations in Metals (Pergamon, London, 1965), Chaps. 6 and 7.