Atomic-level characterisation of the structure of amorphised GaAs utilising EXAFS measurements

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 147, Issue 1-4, 1999, Pages 148-154

  Ridgway, M C ^a,d   Glover, C J ^a   Foran, G J ^b   Yu, K M ^c  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^b AUSTRALIAN NUCLEAR SCIENCE AND TECHNOLOGY ORGANISATION   (Australia)

^c LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^d CENTRE DE CALCUL DE L INSTITUT NATIONAL DE PHYSIQUE NUCLEAIRE ET DE PHYSIQUE DES PARTICULES   (France)

Author keywords

Amorphous GaAs; EXAFS; Extended X ray absorption fine structure; GaAs; Ion implantation

Indexed keywords

AMORPHOUS GALLIUM ARSENIDE; EXTENDED X RAY ABSORPTION FINE STRUCTURE;

AMORPHIZATION; AMORPHOUS MATERIALS; CRYSTALLINE MATERIALS; ION IMPLANTATION; SEMICONDUCTING GALLIUM ARSENIDE; STOICHIOMETRY; X RAY SPECTROSCOPY;

CRYSTAL ATOMIC STRUCTURE;

EID: 0032755220     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(98)00588-6     Document Type: Article

References (15)

1. E.P. O'Reilly, J. Robertson, Phys. Rev. B 34 (1986) 8684.
2. J.P. Xanthakis, P. Katsooulakos, D. Georgiakos, J. Phys.: Condens. Matter 5 (1993) 8677.
3. E. Fois, A. Selloni, G. Pastore, Q.M. Zhang, R. Car, Phys. Rev. B 45 (1992) 13378.
4. C. Molteni, L. Colombo, L. Miglio, Phys. Rev. B 50 (1994) 4371.
5. H. Seong, L.J. Lewis, Phys. Rev. B 53 (1996) 4408.
6. N. Mousseau, L.J. Lewis, Phys. Rev. Lett. 78 (1997) 1484.
7. M.C. Ridgway, C.J. Glover, G.J. Foran, K.M. Yu, J. Appl. Phys. 83 (1998) 4610.
8. M.C. Ridgway, C.J. Glover, H.H. Tan, A. Clark, F. Karouta, G.J. Foran, T.W. Lee, Y. Moon, E. Yoon, J.L. Hansen, A. Nylandsted-Larsen, C. Clerc, J. Chaumont, in: S. Mimi, D. Perry, S. Stock, L. Terminello (Eds.), Application of Synchrotron Radiation Techniques to Materials Science, Mat. Res. Soc., Pittsburgh, 1998, in press.
9. L.G. Haggmark, J.B. Biersack, Nucl. Instr. and Meth. 174 (1980) 257.
10. M.C. Ridgway, C.J. Glover, G.J. Foran, K.M. Yu, J.L. Hansen, A. Nylandsted-Larsen, C. Clerc, J. Chaumont, to be published.
11. P.J. Ellis, H. Freeman, J. Synch. Rad. 2 (1995) 190.
12. J.J. Rehrs, R.C. Albers, Phys. Rev. B 41 (1990) 8139.
13. E.A. Stern, D.E. Sayers, F.W. Lytle, Phys. Rev. B 11 (1975) 4836.
14. S.H. Hunter, in: B.K. Teo and D.C. Joy (Eds.), EXAFS Spectrometry, Techniques and Applications, Plenum, New York, 1981, pp. 163-170.
15. Note that the preliminary analysis for amorphous Ge presented herein assumed a Gaussian disorder distribution, deviations from which can result in error in the value of n. Accordingly, a detailed cumulant expansion analysis is now in progress.