Application of power-law formalism method to equilibrium computation of vapor growth epitaxy

Journal of Chemical Engineering of Japan

Volumn 32, Issue 4, 1999, Pages 506-513

  Hasegawa, Takahiro ^a   Takatani, Hideo ^a   Yoshimura, Jin ^a  

^a SHIZUOKA UNIVERSITY   (Japan)

Author keywords

Convergence Performances; Numerical Algorithm; Power Law Formalism; Thermodynamic Analysis; Vapor Phase Epitaxy

Indexed keywords

ALGORITHMS; CONVERGENCE OF NUMERICAL METHODS; ITERATIVE METHODS; MATHEMATICAL MODELS; PARTIAL PRESSURE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH; THERMODYNAMICS;

NEWTON-RAPHSON METHOD; POWER LAW FORMALISM;

VAPOR PHASE EPITAXY;

SEMICONDUCTOR;

EID: 0032749864     PISSN: 00219592     EISSN: None     Source Type: Journal    
DOI: 10.1252/jcej.32.506     Document Type: Article

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